data sheet silicon transistor ne68133 / 2SC3583 microwave low noise amplifier npn silicon epitaxial transistor data sheet document no. p10360ej4v1ds00 (4th edition) date published march 1997 n description the ne68133 / 2SC3583 is an npn epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from vhf band to uhf band. low- noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. this is achieved by direct nitride passivated base surface process (dnp process) which is a proprietary new fabrication technique. features ? nf 1.2 db typ. @f = 1.0 ghz ? ga 13 db typ. @f = 1.0 ghz absolute maximum ratings (t a = 25 c) collector to base voltage v cbo 20 v collector to emitter voltage v ceo 10 v emitter to base voltage v ebo 1.5 v collector current i c 65 ma total power dissipation p t 200 mw junction temperature t j 150 c storage temperature t stg 65 to +150 c electrical characteristics (t a = 25 c) characteristic symbol min. typ. max. unit test conditions collector cutoff current i cbo 1.0 av cb = 10 v, i e = 0 emitter cutoff current i ebo 1.0 av eb = 1 v, i e = 0 dc current gain h fe * 50 100 250 v ce = 8 v, i c = 20 ma gain bandwidth product f t 9 ghz v ce = 8 v, i c = 20 ma feed-back capacitance c re ** 0.35 0.9 pf v cb = 10 v, i e = 0, f = 1.0 mhz insertion power gain s 21e 2 11 13 db v ce = 8 v, i c = 20 ma, f = 1.0 ghz maximum available gain mag 15 db v ce = 8 v, i c = 20 ma, f = 1.0 ghz noise figure nf 1.2 2.5 db v ce = 8 v, i e = 7 ma, f = 1.0 ghz * pulse measurement pw 350 s, duty cycle 2 % ** the emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge. h fe classification class r33/q * r34/r * r35/s * marking r33 r34 r35 h fe 50 to 100 80 to 160 125 to 250 * old specification / new specification package dimensions (units: mm) 1.5 2 1 3 marking pin connections 1. 2. 3. emitter base collector 2.80.2 2.90.2 1.1 to 1.4 0 to 0.1 0.95 0.3 0.95 0.4 +0.1 -0.05 0.4 +0.1 -0.05 0.16 +0.1 -0.06 0.65 +0.1 -0.15 jeita part no.
2 ne68133 / 2SC3583 typical characteristics (t a = 25 c ) total power dissipation vs. ambient temperature 200 100 0 10 20 50 100 200 50 1 5 10 50 0.5 100 150 t a -ambient temperature- c i c -collector current-ma dc current gain vs. collector current p t -total power dissipation-w h fe -dc current gain v ce = 8 v 0 5 10 15 0.5 1 5 10 50 70 i c -collector current-ma insertion gain vs. collector current |s 21e | 2 -insertion gain-db v ce = 8 v f = 1.0 ghz 0.1 0.5 0.3 0.2 0.7 1 3 2 1 3 2 5 7 10 20 30 v cb -collector to base voltage-v feed-back capacitance vs. collector to base voltage c re -feed-back capacitance-pf f = 1.0 mhz 0 12 8 4 16 20 0.1 0.3 0.2 0.5 0.7. 1.0 2.0 3.0 f-frequency-ghz insertion gain, maximum available gain vs. frequency mag-maximum available gain-db |s 21e | 2 -insertion gain -db v ce = 8 v i c = 20 ma 1 5 3 2 7 10 30 20 1 3 2 5 7 10 20 30 i c -collector current-ma gain bandwidth produut vs. collector current f t -gain bandwidth product-mhz v ce = 8 v free air |s 21e | 2 mag
3 0 2 1 5 4 3 7 6 0.5 1 5 10 50 70 i c -collector current-ma noise figure vs. collector current nf-noise figure-db v ce = 8 v f = 1.0 ghz s- paramete r v c e = 8 . 0 v, i c = 5 . 0 m a, z o = 50 f (mhz) s 1 1 s 1 1 s 2 1 s 2 1 s 1 2 s 1 2 s 2 2 s 2 2 200 400 600 800 1000 1200 1400 1600 1800 2000 0 . 728 0 . 490 0 . 343 0 . 253 0 . 202 0 . 176 0 . 176 0 . 179 0 . 186 0 . 211 45.3 74.5 93.2 110. 1 131. 1 148. 9 162. 8 173. 9 163. 3 151. 1 12. 107 8 . 097 6 . 260 4 . 623 4 . 004 3 . 250 3 . 021 2 . 575 2 . 520 2 . 183 138. 7 114. 2 102. 3 90.1 83.6 75.8 69.4 63.4 58.9 53.4 0 . 036 0 . 065 0 . 079 0 . 090 0 . 101 0 . 125 0 . 144 0 . 160 0 . 188 0 . 202 66.2 61.6 61.6 61.2 61.3 60.8 60.0 59.8 59.1 58.9 0 . 825 0 . 675 0 . 582 0 . 529 0 . 500 0 . 470 0 . 448 0 . 427 0 . 406 0 . 386 21.6 26.6 29.0 28.6 30.1 31.4 33.4 34.8 37.5 44.5 v c e = 8 . 0 v, i c = 20 ma, z o = 50 f (mhz) s 1 1 s 1 1 s 2 1 s 2 1 s 1 2 s 1 2 s 2 2 s 2 2 200 400 600 800 1000 1200 1400 1600 1800 2000 0 . 366 0 . 194 0 . 124 0 . 077 0 . 063 0 . 065 0 . 074 0 . 108 0 . 116 0 . 134 66.8 88.9 104. 3 132. 0 156. 4 179. 5 168. 0 147. 0 137. 6 131. 2 19. 757 10. 502 7 . 591 5 . 446 4 . 653 3 . 754 3 . 460 2 . 934 2 . 870 2 . 479 116. 9 98.8 91.1 82.0 77.6 71.6 66.5 61.9 58.2 53.4 0 . 033 0 . 055 0 . 072 0 . 095 0 . 107 0 . 135 0 . 164 0 . 178 0 . 205 0 . 221 62.6 70.6 74.6 73.2 72.1 72.1 70.1 69.6 66.3 64.0 0 . 587 0 . 485 0 . 453 0 . 419 0 . 413 0 . 392 0 . 369 0 . 347 0 . 333 0 . 312 22.5 23.8 24.3 23.2 24.2 26.4 29.9 32.2 34.3 42.1 ne68133 / 2SC3583
4 s-parameter a n g l e o f r e f l e c t i o n c o e f f c i e n t i n d e g r e e s 20 30 40 50 00 60 70 80 90 100 110 120 130 140 150 ? 160 ? 150 ? 140 ? 130 ? 120 ? 110 ? 100 ? 90 ? 80 ? 70 ? 60 ? 50 ? 40 ?30 ? 20 ? 10 0 10 0.28 0.22 0.30 0.20 0.32 0.18 0.34 0.16 0.36 0.14 0.38 0.12 0.40 0.10 0.42 0.08 0.44 0.06 0.46 0.04 0.21 0.19 0.17 0.15 0.13 0.11 0.09 0.07 0.05 0.03 0.29 0.31 0.33 0.35 0.37 0.39 0.41 0.43 0.45 0.47 0.02 0.48 0.01 0.49 0 0 0.49 0.01 0.48 0.02 0.47 0.03 0.46 0.04 0.45 0.05 0.44 0.06 0.43 0.07 0.42 0.08 0.41 0.09 0.40 0.10 0.39 0.11 0.38 0.12 0.37 0.13 0.36 0.14 0.35 0.15 0.34 0.16 0.33 0.17 0.32 0.18 0.31 0.19 0.30 0.20 0.29 0.21 0.28 0.22 0.27 0.23 0.26 0.24 5 2 . 0 5 2 . 0 0.24 0.26 0.23 0.27 w a v e l e n g t h s t o w a r d l o a d w a v e l e n g t h s t o w a r d g e n e r a t o r 2.0 50 10 6.0 4.0 3.0 1.8 1.6 1.4 1.2 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 . 1 ( +jx ???? z o ) 0.2 0.4 0.6 0.8 1.0 0.8 0.7 0.6 0.3 0.2 0.1 0.2 1.0 0.8 0.6 0.4 0.2 1.0 0.8 0.6 0.4 0.4 0.5 5.0 10 50 3.0 4.0 1.8 2.0 1.2 0 . 1 0.9 1.4 1.6 rea ct ance component ( r ???? z o ) ne g a t iv e r e a c t a n c e c om p o n e n t p os i t i v e r e a c t a n c e c o m p o n e n t 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 0 ( ? jx ???? z o ) 20 20 0.2 0.4 0.6 0.8 1.0 s 11e , s 22e -freq uency s 21e -freq uency 90 0 30 ?30 60 ?60 180 150 ?150 120 ?120 ?90 4 0 8 12 16 20 s 21e 0.2 ghz 0.2 ghz i c = 5 ma i c = 20 ma 90 0 30 ?30 60 ?60 180 150 ?150 120 ?120 ?90 0.04 0 0.08 0.12 0.16 0.20 s 12e 2.0 ghz i c = 20 ma i c = 5 ma s 12e -freq uency v ce = 8 v 200 mhz step condition v ce = 8 v condition v ce = 8 v condition 2.0 ghz 2.0 ghz 0.2 ghz 0.2 ghz i c = 20 ma i c = 5 ma i c = 5 ma s 11e s 22e i c = 20 ma 0.2 ghz ne68133 / 2SC3583
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